Multi-chip module with stacked face-down connected dies

ABSTRACT

A microelectronic assembly can include a substrate having first and second surfaces, at least two logic chips overlying the first surface, and a memory chip having a front surface with contacts thereon, the front surface of the memory chip confronting a rear surface of each logic chip. The substrate can have conductive structure thereon and terminals exposed at the second surface for connection with a component. Signal contacts of each logic chip can be directly electrically connected to signal contacts of the other logic chips through the conductive structure of the substrate for transfer of signals between the logic chips. The logic chips can be adapted to simultaneously execute a set of instructions of a given thread of a process. The contacts of the memory chip can be directly electrically connected to the signal contacts of at least one of the logic chips through the conductive structure of the substrate.

BACKGROUND OF THE INVENTION

The present invention relates to stacked microelectronic assemblies andmethods of making such assemblies, and to components useful in suchassemblies.

Semiconductor chips are commonly provided as individual, prepackagedunits. A standard chip has a flat, rectangular body with a large frontface having contacts connected to the internal circuitry of the chip.Each individual chip typically is mounted in a package which, in turn,is mounted on a circuit panel such as a printed circuit board and whichconnects the contacts of the chip to conductors of the circuit panel. Inmany conventional designs, the chip package occupies an area of thecircuit panel considerably larger than the area of the chip itself.

As used in this disclosure with reference to a flat chip having a frontface, the “area of the chip” should be understood as referring to thearea of the front face. In “flip chip” designs, the front face of thechip confronts the face of a package substrate, i.e., the chip carrier,and the contacts on the chip are bonded directly to contacts of the chipcarrier by solder balls or other connecting elements. In turn, the chipcarrier can be bonded to a circuit panel through terminals overlying thefront face of the chip. The “flip chip” design provides a relativelycompact arrangement; each chip occupies an area of the circuit panelequal to or slightly larger than the area of the chip's front face, suchas disclosed, for example, in certain embodiments of commonly-assignedU.S. Pat. Nos. 5,148,265; 5,148,266; and 5,679,977, the disclosures ofwhich are incorporated herein by reference.

Certain innovative mounting techniques offer compactness approaching orequal to that of conventional flip-chip bonding. Packages which canaccommodate a single chip in an area of the circuit panel equal to orslightly larger than the area of the chip itself are commonly referredto as “chip-sized packages.”

Besides minimizing the planar area of the circuit panel occupied bymicroelectronic assembly, it is also desirable to produce a chip packagethat presents a low overall height or dimension perpendicular to theplane of the circuit panel. Such thin microelectronic packages allow forplacement of a circuit panel having the packages mounted therein inclose proximity to neighboring structures, thus producing the overallsize of the product incorporating the circuit panel.

Various proposals have been advanced for providing plural logic and/ormemory chips in a single package or module. In the conventional“multi-chip module,” all of the logic and/or memory chips are mountedside-by-side on a single package substrate, which in turn can be mountedto the circuit panel. This approach offers only limited reduction in theaggregate area of the circuit panel occupied by the chips. The aggregatearea is still greater than the total surface area of the individualchips in the module.

It has also been proposed to package plural chips in a “stack”arrangement, i.e., an arrangement where plural chips are placed one ontop of another. In a stacked arrangement, several chips can be mountedin an area of the circuit panel that is less than the total area of thechips. Certain stacked chip arrangements are disclosed, for example, incertain embodiments of the aforementioned U.S. Pat. Nos. 5,679,977;5,148,265; and U.S. Pat. No. 5,347,159, the disclosure of which isincorporated herein by reference. U.S. Pat. No. 4,941,033, alsoincorporated herein by reference, discloses an arrangement in whichchips are stacked on top of another and interconnected with one anotherby conductors on so-called “wiring films” associated with the chips.

Despite the advances that have been made in multi-chip packages, thereis still a need for improvements in order to minimize the size andimprove the performance of such packages. These attributes of thepresent invention are achieved by the construction of themicroelectronic assemblies as described hereinafter.

BRIEF SUMMARY OF THE INVENTION

In accordance with an aspect of the invention, a microelectronicassembly can include an interconnection substrate having a first surfaceand a second surface remote from the first surface in a verticaldirection, at least two logic chips overlying the first surface of thesubstrate, and a memory chip having a front surface with contactsthereon. The interconnection substrate can have conductive structurethereon. The interconnection substrate can have terminals exposed at thesecond surface for connection with a component. Each logic chip can havea plurality of signal contacts at a front surface thereof confrontingthe first surface of the interconnection substrate. The signal contactsof each logic chip can be directly electrically connected to the signalcontacts of the other logic chips through the conductive structure ofthe substrate for transfer of signals between the logic chips. Thesignals can represent at least one of data or instructions. The logicchips can be adapted to simultaneously execute a set of instructions ofa given thread of a process. Each logic chip can have a rear surfaceopposite the front surface. The front surface of the memory chip canconfront the rear surface of each of the at least two logic chips. Thecontacts of the memory chip can be directly electrically connected tothe signal contacts of at least one of the at least two logic chipsthrough the conductive structure of the substrate.

In a particular embodiment, the microelectronic assembly can alsoinclude an intermediate interposer substrate located between first andsecond logic chips of the at least two logic chips in a horizontaldirection perpendicular to the vertical direction. The intermediateinterposer substrate can have at least one conductive via extendingtherethrough between opposing first and second surfaces thereof. Theconductive structure of the substrate can include the at least oneconductive via. In one embodiment, the microelectronic assembly can alsoinclude at least one solder connect extending from the front surface ofthe memory chip in the vertical direction and located between first andsecond logic chips of the at least two logic chips in a horizontaldirection perpendicular to the vertical direction. The conductivestructure of the substrate can include the at least one solder connect.

In an exemplary embodiment, the microelectronic assembly can alsoinclude at least one conductive pillar extending from theinterconnection substrate in the vertical direction and located betweenfirst and second logic chips of the at least two logic chips in ahorizontal direction perpendicular to the vertical direction. Theconductive structure of the substrate can include the at least oneconductive pillar. Each conductive pillar can be electrically connectedto a respective conductive element exposed at the front surface of thememory chip by a conductive mass. In a particular embodiment, themicroelectronic assembly can also include at least one conductive postextending from the front surface of the memory chip in the verticaldirection and located between first and second logic chips of the atleast two logic chips in a horizontal direction perpendicular to thevertical direction. The conductive structure of the substrate caninclude the at least one conductive post. Each conductive post can beelectrically connected to a respective conductive element exposed at thefirst surface by a conductive mass.

In one embodiment, the microelectronic assembly can also include atleast one conductive pillar extending from the interconnection substratein the vertical direction and at least one conductive post extendingfrom the front surface of the memory chip in the vertical direction.Each of the conductive pillars and posts can be located between firstand second logic chips of the at least two logic chips in a horizontaldirection perpendicular to the vertical direction. The conductivestructure of the substrate can include the conductive pillars and posts.Each conductive pillar can be electrically connected to a respectiveconductive post by a conductive mass. In an exemplary embodiment, theinterconnection substrate can include at least one raised surfaceextending above the first surface in the vertical direction. The atleast one raised surface can be located between first and second logicchips of the at least two logic chips in a horizontal directionperpendicular to the vertical direction. The conductive structure of thesubstrate can include at least one conductive contact of the at leastone raised surface.

In a particular embodiment, the at least one raised surface can includea plurality of stacked dielectric layers overlying the first surface ofthe interconnection substrate. In one embodiment, the microelectronicassembly can also include an encapsulant having a substantially planarmajor surface. The encapsulant can extend between first and second logicchips of the at least two logic chips in a horizontal directionperpendicular to the vertical direction. The major surface of theencapsulant can be substantially co-planar with the rear surface of eachof the first and second logic chips. In an exemplary embodiment, theencapsulant can have at least one conductive via extending therethroughbetween the major surface and a second surface opposite the majorsurface. The conductive structure of the substrate can include the atleast one conductive via.

In accordance with another aspect of the invention, a microelectronicassembly can include an interconnection substrate having a first surfaceand a second surface remote from the first surface in a verticaldirection, at least two logic chips overlying the first surface of thesubstrate, and a memory chip having a front surface with contactsthereon and a rear surface opposite the front surface. Theinterconnection substrate can have conductive structure thereon. Theinterconnection substrate can have terminals exposed at the secondsurface for connection with a component. The logic chips can haveadjacent parallel edges spaced apart by no more than 500 microns. Eachlogic chip can have a plurality of signal contacts at a front surfacethereof confronting the first surface of the interconnection substrate.The signal contacts of each logic chip can be directly electricallyconnected to the signal contacts of the other logic chips through theconductive structure of the substrate for transfer of signals betweenthe logic chips. The signals can represent at least one of data orinstructions. The logic chips can be adapted to simultaneously execute aset of instructions of a given thread of a process. Each logic chip canhave a rear surface opposite the front surface. The front surface of thememory chip can confront the rear surface of at least one of the atleast two logic chips. The contacts of the memory chip can be directlyelectrically connected to the signal contacts of at least one of the atleast two logic chips through the conductive structure of the substrate.

In an exemplary embodiment, the microelectronic element can also includeat least one wire bond extending from the front surface of the memorychip to the first surface of the interconnection substrate. The at leastone wire bond can be located between first and second logic chips of theat least two logic chips in a horizontal direction perpendicular to thevertical direction. The conductive structure of the substrate caninclude the at least one wire bond. In one embodiment, theinterconnection substrate can have an effective CTE less than 10 ppm/°C. In a particular embodiment, the microelectronic element can alsoinclude a second substrate having a surface that faces the secondsurface of the interconnection substrate. The second substrate can havecontacts electrically connected with the terminals of theinterconnection substrate. The second substrate can have an effectiveCTE greater than or equal to 10 ppm/° C. and can have second terminalson a surface opposite the surface that faces the interconnectionsubstrate.

In one embodiment, the interconnection substrate can have an effectiveCTE less than 7 ppm/° C. In an exemplary embodiment, the at least twologic chips can have substantially identical structure. In a particularembodiment, the conductive structure of the substrate can include aplurality of electrically conductive traces extending in a directionsubstantially parallel to the first surface. In one embodiment, themicroelectronic element can also include a heat spreader at leastpartially overlying a rear surface of at least one of the logic chips.In an exemplary embodiment, the heat spreader can at least partiallyoverlie the memory chip. In a particular embodiment, the memory chip canhave a first width in a horizontal direction perpendicular to thevertical direction and first and second logic chips of the at least twologic chips can have a combined second width in the horizontaldirection. The first width can be less than the second width.

In a particular embodiment, the heat spreader can include a pedestalportion extending beyond a lower surface thereof. The pedestal portioncan contact the rear surface of at least one of the first and secondlogic chips. In one embodiment, the memory chip can at least partiallyoverlie an upper surface of the heat spreader. In an exemplaryembodiment, the conductive structure of the substrate can include a leadextending through an opening in the heat spreader. In a particularembodiment, the microelectronic assembly can also include a plurality ofheat spreaders including said heat spreader. Each of the plurality ofheat spreaders can at least partially overlie a rear surface of at leastone of the logic chips. The conductive structure of the substrate caninclude a lead extending between edges of two adjacent ones of theplurality of heat spreaders.

Further aspects of the invention provide systems that incorporatemicroelectronic structures according to the foregoing aspects of theinvention, composite chips according to the foregoing aspects of theinvention, or both in conjunction with other electronic devices. Forexample, the system may be disposed in a single housing, which may be aportable housing. Systems according to preferred embodiments in thisaspect of the invention may be more compact than comparable conventionalsystems.

In accordance with yet another aspect of the invention, a method offabricating a microelectronic assembly can include providing aninterconnection substrate, electrically connecting signal contacts of atleast two logic chips to one another through conductive structure of thesubstrate for transfer of signals between the logic chips, andelectrically connecting contacts exposed at a front surface of a memorychip to the signal contacts of at least one of the at least two logicchips through the conductive structure of the substrate. Theinterconnection substrate can have a first surface, a second surfaceremote from the first surface in a vertical direction, and terminalsexposed at the second surface for connection with a component. Thesignals can represent at least one of data or instructions. The logicchips can be adapted to simultaneously execute a set of instructions ofa given thread of a process. Each logic chip can have a front surfaceconfronting the first surface of the interconnection substrate. Thefront surface of the memory chip can confront the rear surface of eachof the at least two logic chips.

In one embodiment, the method can also include providing an encapsulantbetween the at least two logic chips in a horizontal directionperpendicular to the vertical direction. In a particular embodiment, thestep of electrically connecting the contacts exposed at the frontsurface of the memory chip can include forming openings extending in thevertical direction through the encapsulant between a major surfacethereof and the first surface of the substrate, forming conductive viasin contact with the contacts of the conductive structure of thesubstrate and extending within the openings, and electrically connectingthe contacts of the memory chip with the conductive vias. Contacts ofthe conductive structure of the substrate can be exposed within theopenings. The openings can be located between first and second logicchips of the at least two logic chips in the horizontal direction.

In an exemplary embodiment, the first and second logic chips can eachhave a rear surface opposite the respective front surface thereof. Thestep of providing the encapsulant can include planarizing a majorsurface of the encapsulant so that the major surface is substantiallyco-planar with the rear surface of each of the first and second logicchips. In one embodiment, the planarizing can be performed by lappingthe major surface of the encapsulant and the rear surface of each of thefirst and second logic chips.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic sectional view of a stacked microelectronicassembly according to an embodiment of the present invention.

FIG. 2 is an enlarged fragmentary sectional view of a portion of FIG. 1illustrating a wire bond connection between a face-up memory chip and aninterconnection substrate.

FIG. 3A is an enlarged fragmentary sectional view of a portion of FIG. 1illustrating an electrical connection between a face-down memory chipand an interconnection substrate.

FIGS. 3B-3E are enlarged fragmentary sectional views of alternativeembodiments of FIG. 3A.

FIG. 4 is a diagrammatic sectional view of a stacked microelectronicassembly according to another embodiment having a heat sink locatedbetween the memory chips and the logic chips.

FIG. 5A is an enlarged fragmentary sectional view of a portion of FIG. 4illustrating an electrical connection between a face-down memory chipand an interconnection substrate.

FIG. 5B is an enlarged fragmentary sectional view of an alternativeembodiment of FIG. 5A.

FIG. 6 is a diagrammatic sectional view of a stacked microelectronicassembly according to yet another embodiment having a planarizedencapsulant extending between the logic chips.

FIG. 7A is an enlarged fragmentary sectional view of a portion of FIG. 6illustrating an electrical connection between a face-down memory chipand an interconnection substrate.

FIG. 7B is an enlarged fragmentary sectional view of an alternativeembodiment of FIG. 7A.

FIG. 8 is a top-down plan view that can correspond to themicroelectronic assemblies shown in FIGS. 1 through 7B.

FIG. 9 is a diagrammatic sectional view of a stacked microelectronicassembly according to still another embodiment having a secondsubstrate.

FIG. 10 is a schematic depiction of a system according to one embodimentof the invention.

DETAILED DESCRIPTION

With reference to FIG. 1, a microelectronic assembly according to anembodiment of the present invention includes an interconnectionsubstrate 20, logic chips 30 overlying a first surface 21 of thesubstrate 20, memory chips 40, each memory chip at least partiallyoverlying a rear surface 36 of at least one of the logic chips, and atleast one heat spreader 50 overlying a surface of each memory chip.

In FIG. 1, the directions parallel to the first surface 21 are referredto herein as “horizontal” or “lateral” directions, whereas thedirections perpendicular to the front surface are referred to herein asupward or downward directions and are also referred to herein as the“vertical” directions. The directions referred to herein are in theframe of reference of the structures referred to. Thus, these directionsmay lie at any orientation to the normal or gravitational frame ofreference. A statement that one feature is disposed at a greater height“above a surface” than another feature means that the one feature is ata greater distance in the same orthogonal direction away from thesurface than the other feature. Conversely, a statement that one featureis disposed at a lesser height “above a surface” than another featuremeans that the one feature is at a smaller distance in the sameorthogonal direction away from the surface than the other feature.

The interconnection substrate 20 can have a thickness T between thefirst surface 21 and a second surface remote from the first surface in avertical direction V substantially perpendicular to the first surface.The thickness T typically is less than 200 μm, and can be significantlysmaller, for example, 130 μm, 70 μm or even smaller.

The interconnection substrate 20 can have an interposer portion 24extending from the second surface 22 to an intermediate surface 25. Theinterposer portion 24 preferably has a coefficient of thermal expansion(“CTE”) less than 10*10−6/° C. (or ppm/° C.). In a particularembodiment, the interposer portion 24 can have a CTE less than 7*10−6/°C. (or ppm/° C.). The interposer portion 24 preferably consistsessentially of a material such as semiconductor, glass, or ceramic.

The interconnection substrate 20 can have one or more dielectric layers60 that can overlie the intermediate surface 25 of the interposerportion 24. The dielectric layers 60 can extend from the intermediatesurface 25 of the interposer portion 24 to the first surface 21 of theinterconnection substrate 20, such that an exposed surface of thedielectric layers 60 defines the first surface of the interconnectionsubstrate. Such dielectric layers 60 can electrically insulateconductive elements of the interconnection substrate 20 from one anotherand from the interposer portion 24. The dielectric layers 60 can includean inorganic or organic dielectric material or both. In one example, thedielectric layers 60 can include an electrodeposited conformal coatingor other dielectric material, for example, a photoimageable polymericmaterial, for example, a solder mask material.

In the embodiments described herein, the dielectric layers 60 can bebonded to the interposer portion 24 and can have a thickness that issubstantially less than a thickness of the interposer portion, such thatthe interconnection substrate 20 can have an effective CTE that isapproximately equal to the CTE of the interposer portion, even if theCTE of the dielectric layer is substantially higher than the CTE of theinterposer portion. In one example, the interconnection substrate 20 canhave an effective CTE less than 10*10−6/° C. (or ppm/° C.). In aparticular example, the interconnection substrate 20 can have aneffective CTE less than 7*10−6/° C. (or ppm/° C.).

Electrical contacts 23 are exposed at the first surface 21 of theinterconnection substrate 20. As used in this disclosure, a statementthat an electrically conductive element is “exposed at” a surface of astructure indicates that the electrically conductive element isavailable for contact with a theoretical point moving in a directionperpendicular to the surface toward the surface from outside thestructure. Thus, a terminal or other conductive element which is exposedat a surface of a structure may project from such surface; may be flushwith such surface; or may be recessed relative to such surface andexposed through a hole or depression in the structure.

Electrical terminals 26 are exposed at the second surface 22 of thesubstrate 20 for interconnection with another component, such as acircuit board. The electrical terminals 26 can be electrically connectedto another component through conductive masses 27.

The conductive masses 27 can comprise a fusible metal having arelatively low melting temperature, e.g., solder, tin, or a eutecticmixture including a plurality of metals. Alternatively, the conductivemasses 27 can include a wettable metal, e.g., copper or other noblemetal or non-noble metal having a melting temperature higher than thatof solder or another fusible metal. Such wettable metal can be joinedwith a corresponding feature, e.g., a fusible metal feature of a circuitboard to externally interconnect the microelectronic assembly 10 to suchcircuit board. In a particular embodiment, the conductive masses 27 caninclude a conductive material interspersed in a medium, e.g., aconductive paste, e.g., metal-filled paste, solder-filled paste orisotropic conductive adhesive or anisotropic conductive adhesive.

A plurality of electrically conductive traces 62 can extend along asurface of a respective dielectric layer 60, along the first surface 21of the substrate 20, and/or between adjacent dielectric layers. Some ofthe traces 62 may be electrically connected to one or more of thecontacts 23. The interposer portion 24 of the interconnection substrate20 includes conductive vias 28 extending between one or more of thetraces 62 and respective electrical terminals 26.

The logic chips 30 include first, second, and third logic chips 31, 32,and 33. Each of the logic chips 30 can overlie the first surface 21 ofthe interconnection substrate 20. Each logic chip 30 can have aplurality of conductive contacts 34 at a front surface 35 thereofconfronting the first surface 21 of the interconnection substrate 20,such that each logic chip 30 is oriented face-down with respect to thefirst surface of the interconnection substrate. The contacts 34 of eachlogic chip 30 can be exposed at a surface of a dielectric layer (notshown) overlying the front surface 35 of the logic chip. One or more ofsuch dielectric layers can be referred to as a “passivation layer” ofthe logic chip 30. Each logic chip 30 can have a rear surface 36opposite the front surface 35 thereof.

In a particular embodiment, each logic chip 30 can be flip-chip mountedto the contacts 23 exposed at the first surface 21 of theinterconnection substrate 20. The contacts 34 of each logic chip 30 canbe electrically connected to the contacts 23 by conductive masses 70such as solder balls or any other material described above withreference to the conductive masses 27.

A plurality of active semiconductor devices (e.g., transistors, diodes,etc.) can be disposed in an active semiconductor region of each logicchip 30 located at and/or below the front surface 35. The logic chips 30can be electrically connected to one another through the traces 62. Thelogic chips 30 can have substantially identical structure and can beadapted to function as a single processor, e.g., a multi-core processor,and/or such logic chips can be adapted to simultaneously execute a setof instructions of a given thread of a process. As used herein, logicchips 30 that are considered to have “substantially identical structure”can have identical structure to one another, or such logic chips 30 canhave minor variations relative to one another.

In a particular embodiment, the contacts 34 of each of the logic chips30 can be signal contacts. In such an embodiment, the signal contacts 34of each logic chip 30 can be directly electrically connected to thesignal contacts of the other logic chips through conductive structure ofthe substrate (e.g., the plurality of electrically conductive traces 62,the electrical contacts 23 exposed at the first surface 21, etc.) fortransfer of signals between the logic chips, the signals representing atleast one of data or instructions.

The memory chips 40 can include first and second memory chips 41 and 42.Each of the memory chips 40 can at least partially overlie the rearsurface 36 of at least one of the logic chips 30. Each logic chip 30 canhave a plurality of conductive contacts 44 at a front surface 45thereof. The contacts 44 of each memory chip 40 can be arranged, forexample, in one or two parallel rows. A row of contacts 44 can extendalong the an edge of the front surface 45, as shown in the first memorychip 41, or along the center of the front surface 45, as shown in thesecond memory chip 42. Each memory chip 40 can have a rear surface 46opposite the front surface 45 thereof.

The rear surface 46 of the first memory chip 41 can confront the rearsurface 36 of the first logic chip 31, such that the first memory chipcan be oriented face-up with respect to the first surface 21 of thesubstrate 20. An example memory chip 40 that is mounted face-upoverlying the rear surface 36 of a logic chip 30 can also be seen inFIG. 8.

The front surface 45 of the second memory chip 42 can confront the rearsurfaces 36 of the second and third logic chips 32 and 33, such that thesecond memory chip can be oriented face-down with respect to the firstsurface 21 of the substrate 20. An example memory chip 40 that ismounted face-down overlying the rear surfaces 36 of two adjacent logicchips 30 can also be seen in FIG. 8. In a particular embodiment, shownin FIG. 8, a plurality of memory chips 40 can be mounted face-downoverlying the rear surfaces 36 of two adjacent logic chips 30. In oneembodiment, shown in FIG. 8, a single memory chip 40′ can be mountedface-down overlying the rear surface 36 of four adjacent logic chips 30.

In one example, the first memory chip 41 can be attached to the firstlogic chip 31 by an adhesive layer 72 extending between the rear surface46 of the first memory chip and the rear surface 36 of the first logicchip.

In a particular embodiment, the second memory chip 42 can be attached tothe second and third logic chips 32 and 33 by adhesive layers 72extending between the front surface 45 of the second memory chip and therear surfaces 36 of the second and third logic chips. In such anembodiment, the adhesive layers 72 can extend along the front surface 45of the second memory chip 42 near lateral edges 47 thereof, such thatthe adhesive layers do not contact the contacts 44 of the second memorychip.

The contacts 44 of each memory chip 40 can be exposed at a surface of adielectric layer (not shown) overlying the front surface 45 of thememory chip. One or more of such dielectric layers can be referred to asa “passivation layer” of the memory chip 40. Each memory chip 40 can beelectrically connected to at least one of the logic chips 30 through theplurality of electrically conductive traces 62.

Each of the memory chips 40 can include a memory storage element. Asused herein, a “memory storage element” refers to a multiplicity ofmemory cells arranged in an array, together with circuitry usable tostore and retrieve data therefrom, such as for transport of the dataover an electrical interface.

In some embodiments, the plurality of electrically conductive traces 62,the electrical contacts 23 exposed at the first surface 21 of theinterconnection substrate 20, the conductive masses 70, and otherconductive elements overlying the first surface 21 of theinterconnection substrate 20 or extending within the interconnectionsubstrate can be considered to be conductive structure of theinterconnection substrate. In such embodiments, the logic chips 30 canbe directly electrically connected to one another through the conductivestructure of the substrate, and at least one of the memory chips 40 canbe directly electrically connected to at least one of the logic chips 30through the conductive structure of the substrate.

The heat spreader 50 can be made, for example, from any thermallyconductive material, including a metal such as titanium, tungsten,copper, or gold. The heat spreader 50 can spread heat across the area ofthe first surface 21 of the interconnection substrate 20, which canresult in improved thermal performance compared to a microelectronicassembly without such a heat spreader. The heat spreader 50 can overliemost of the first surface 21 of the interconnection substrate 20. In anyof the embodiments described herein, there can be a plurality of heatspreaders 50 that together can function to spread heat across the areaof at least a portion of the first surface 21 of the interconnectionsubstrate 20.

The heat spreader 50 can at least partially overlie the rear surface 36of at least one of the logic chips 30. The heat spreader 50 can at leastpartially overlie the front surface 45 of the first memory chip 41 andthe rear surface 46 of the second memory chip 42. As shown in FIG. 1,the heat spreader 50 can directly contact the front surface 45 of thefirst memory chip 41 and the rear surface 46 of the second memory chip42. A lower surface 51 of the heat spreader 50 can have a gap or recess53 so that the heat spreader does not directly contact the contacts 44of the face-up first memory chip 41.

The heat spreader 50 can overlie and can be in thermal communicationwith the memory chips 40 and the logic chips 30, either directly, orindirectly with additional thermally conductive material such as solder,thermally conductive adhesive, or a thermal grease disposedtherebetween. In an example embodiment where the heat spreader 50contacts one memory chip 40 (e.g., the second memory chip 42) and twologic chips 30 (e.g., the second and third logic chips 32 and 33), thememory chip can have a first width W1 in a horizontal direction Esubstantially parallel to the first surface 21 of the substrate 20, andthe logic chips can have a combined second width W2 in the horizontaldirection, the first width being less than the second width. In such anembodiment, having the width W1 be less than the width W2 can provideportions of the rear surfaces 36 of one or both of the two logic chips30 that extend beyond a lateral edge 47 of the memory chip 40, such thatheat can transfer directly from the rear surfaces of the logic chips toone or more pedestal portions 56 of the heat spreader 50 extendingbeyond the lower surface 51 to contact a logic chip, or such that heatcan transfer indirectly from the rear surfaces of the logic chips to thelower surface 51 of the heat spreader 50 through a thermal adhesive 57disposed therebetween. Such a relationship between a memory chip 40having a width W1 and two adjacent logic chips 30 having a combinedwidth W2 can also be seen in FIG. 8.

FIG. 2 shows further details of the electrical connection between thecontacts 44 of the first memory chip 41 and the contacts 23 exposed atthe first surface 21 of the interconnection substrate 20 shown inFIG. 1. Some or all of the contacts 44 can be electrically connected tothe contacts 23 by respective wire bonds 63 extending therebetween. Suchwire bonds 63 can be located between lateral edges 37 of the first andsecond logic chips 31 and 32 in the horizontal direction E. The firstmemory chip 41 can be connected to the plurality of electricallyconductive traces 62 through at least one of the wire bonds 63. In anexemplary embodiment having contacts 44 of a memory chip 41 that areelectrically connected to contacts 23 of the substrate 20 by respectivewire bonds 63 extending therebetween, the wire bonds can extend betweenadjacent logic chips 31 and 32 having adjacent parallel edges 37 spacedapart by no more than 500 microns.

An example embodiment of the wire bonds 63 extending between the lateraledges 37 of adjacent logic chips 30 from a row of contacts 44 of amemory chip 40 to the first surface 21 of the interconnection substrate20 can also be seen in FIG. 8. In a particular embodiment, shown in FIG.8, wire bonds 63 extending between a plurality of memory chips 40 andthe first surface 21 of the interconnection substrate 20 can extendbetween the lateral edges 37 of two adjacent logic chips 30.

FIG. 3A shows further details of the electrical connection between thecontacts 44 of the second memory chip 42 and the contacts 23 exposed atthe first surface 21 of the interconnection substrate 20 shown inFIG. 1. Some or all of the contacts 44 can be electrically connected tothe contacts 23 by respective conductive posts 64 extendingtherebetween. Such conductive posts 64 can be located between lateraledges of the second and third logic chips 32 and 33 in the horizontaldirection E. The second memory chip 42 can be connected to the pluralityof electrically conductive traces 62 through at least one of theconductive posts 64.

The conductive posts 64 (and any of the other conductive posts describedherein) can have any shape, including frustoconical (as shown in FIG.3A) or cylindrical. In embodiments where the conductive posts 64 have afrustoconical shape, the cross-sectional diameter of the posts 64 cantaper in either direction between the contacts 44 and the contacts 23.

FIG. 3B shows an alternate embodiment of the electrical connectionbetween the contacts 44 of the second memory chip 42 and the contacts 23exposed at the first surface 21 of the interconnection substrate 20shown in FIG. 1. As shown in FIG. 3B, some or all of the conductiveposts 64 of FIG. 1 can be replaced by respective conductive vias 83extending through at least one intermediate interposer substrate 80 andrespective conductive masses 74.

The intermediate interposer substrate 80 can have a first surface 81confronting the front surface 45 of the second memory chip 42 and asecond surface 82 opposite therefrom in the vertical direction V, andcan be located between opposing lateral edges 37 of the second and thirdlogic chips 32 and 33 in the horizontal direction E. The substrate 80can be have a coefficient of thermal expansion (“CTE”) less than10*10−6/° C. (or ppm/° C.). The substrate 80 can have substantially thesame thickness T′ in the vertical direction V between the first andsecond surfaces 81 and 82 as the second and third logic chips 32 and 33.

The substrate 80 can have at least one conductive via 83 extendingbetween the first and second surfaces 81 and 82. Each via 83 can beelectrically connected to a respective contact 84 exposed at the firstsurface 81 and a respective contact 85 exposed at the second surface 82.Each contact 84 can be connected with a respective contact 44 of thesecond memory chip 42 by a conductive mass 75. Each contact 85 can beconnected with a respective contact 23 exposed at the first surface 21of the interconnection substrate 20 by a conductive mass 74. Theconductive masses 74 and 75 can be solder balls or any other materialdescribed above with reference to the conductive masses 27.

The electrical connections between some or all of the contacts 44 andthe contacts 23 can include respective ones of the conductive vias 83.The second memory chip 42 can be connected to the plurality ofelectrically conductive traces 62 through at least one of the conductivevias 83.

FIG. 3C shows another alternate embodiment of the electrical connectionbetween the contacts 44 of the second memory chip 42 and the contacts 23exposed at the first surface 21 of the interconnection substrate 20shown in FIG. 1. As shown in FIG. 3C, some or all of the conductiveposts 64 of FIG. 1 can be replaced by respective elongated conductivemasses 76. The elongated conductive masses 76 can be elongated solderconnects or any other material described above with reference to theconductive masses 27.

FIG. 3D shows yet another alternate embodiment of the electricalconnection between the contacts 44 of the second memory chip 42 and thecontacts 23 exposed at the first surface 21 of the interconnectionsubstrate 20 shown in FIG. 1. As shown in FIG. 3D, some or all of theconductive posts 64 of FIG. 1 can be replaced by respective conductiveposts 86 and conductive pillars 87. The conductive posts 86 and pillars87 typically are solid metal bumps or protrusions that typically consistessentially of copper, copper alloy, nickel, or gold, or a combinationthereof. In one example, the posts 86, the pillars 87, or both the postsand the pillars can be formed by plating into openings in a removablelayer such as a photoresist mask. In another example, the posts 86, thepillars 87, or both the posts and the pillars can be formed by etchingone or more metal layers overlying the first surface 21 of theinterconnection substrate 20 and/or the front surface 45 of the secondmemory chip 42.

Each of the conductive posts 86 can extend from a respective conductivecontact 44 exposed at the front surface 45 of the second memory chip 42in the vertical direction V and can be located between opposing lateraledges 37 of the second and third logic chips 32 and 33 in the horizontaldirection E. Each of the conductive pillars 87 can extend from arespective conductive contact 23 extending from the first surface 21 ofthe interconnection substrate 20 in the vertical direction V and can belocated between opposing lateral edges 37 of the second and third logicchips 32 and 33 in the horizontal direction H.

Corresponding ones of the conductive posts 86 and conductive pillars 87can be electrically connected to one another by respective conductivemasses 77. The conductive masses 77 can be elongated solder connects orany other material described above with reference to the conductivemasses 27. The second memory chip 42 can be connected to the pluralityof electrically conductive traces 62 through at least one conductivepost 86 and conductive pillar 87.

The conductive posts 86 and the conductive pillars 87 can have anyshape, including frustoconical or cylindrical (as shown in FIG. 3D). Insome cases, a conductive post 86 can be essentially identical with theconductive pillar 87 to which it is connected. In embodiments where theconductive posts 86 and the conductive pillars 87 have a frustoconicalshape, the cross-sectional diameter of the posts and/or pillars cantaper in either direction between the contacts 44 and the contacts 23.

In one embodiment, some or all of the contacts 44 of the second memorychip 42 can be electrically connected to corresponding contacts 23exposed at the major surface 61 by conductive posts 86 and conductivemasses, but without including the conductive pillars 87. In such anembodiment, each conductive post 86 can be directly connected with acorresponding contact 23 by a conductive mass.

In another embodiment, some or all of the contacts 44 of the secondmemory chip 42 can be electrically connected to corresponding contacts23 exposed at the first surface 21 of the interconnection substrate 20by conductive pillars 87 and conductive masses, but without includingthe conductive posts 86. In such an embodiment, each conductive pillar87 can be directly connected with a corresponding contact 44 of thesecond memory chip 42 by a conductive mass.

FIG. 3E shows still another alternate embodiment of the electricalconnection between the contacts 44 of the second memory chip 42 and thecontacts 23 exposed at the first surface 21 of the interconnectionsubstrate 20 shown in FIG. 1. As shown in FIG. 3E, some or all of theconductive posts 64 of FIG. 1 can be replaced by respective conductiveposts 88 and at least one raised surface 66 of the interconnectionsubstrate 20.

Each raised surface 66 can be an upward-facing surface of a respectiveraised portion 29 of the interconnection substrate 20 extending abovethe first surface 21 thereof in the vertical direction V. Each raisedsurface 66 can be located between opposing lateral edges 37 of thesecond and third logic chips 32 and 33 in the horizontal direction H. Asshown in FIG. 3E, each raised portion 29 can include a raised section24′ of the interposer portion 24, and the dielectric layers 60 can bedeposited overlying the interposer portion and the raised sectionthereof.

Each raised surface 66 can have at least one conductive contact 23exposed thereat that is electrically connected with the plurality ofelectrically conductive traces 62. The second memory chip 42 can beelectrically connected to the plurality of traces 62 through at leastone conductive contact 23 of the at least one raised surface 66.

Each of the conductive posts 88 can extend from a respective conductivecontact 44 exposed at the front surface 45 of the second memory chip 42in the vertical direction V and can be located between opposing lateraledges 37 of the second and third logic chips 32 and 33 in the horizontaldirection E. Each conductive post 88 can be connected with a respectivecontact 23 of a raised surface 66 by a conductive mass 78. Theconductive masses 78 can be solder balls or any other material describedabove with reference to the conductive masses 27.

In embodiments where each raised portion 29 includes a raised section24′ of the interposer portion 24, the raised section can be formed byapplying a mask layer such as a photoresist layer to locations of aninitial surface of the interposer portion 24 where it is desired to formthe raised sections, and the interposer portion can then be etched inlocations not protected by the mask layer, such that the protectedraised sections extend above the intermediate surface 25. Subsequently,the mask layer can be removed and the dielectric layers 60 can bedeposited overlying the interposer portion 24 and the raised section 24′thereof.

In a particular embodiment (not shown), each raised portion 29 can bemade from a dielectric material such as any of the materials describedabove with reference to the dielectric layers 60. In such an embodiment,each raised portion 29 can include a plurality of stacked dielectriclayers overlying the first surface 21 of the interconnection substrate20. In one example, each raised portion 29 can be formed using adielectric build-up process.

Referring now to FIG. 4, a microelectronic assembly 110 according to anembodiment of the present invention includes an interconnectionsubstrate 120, logic chips 130 overlying a first surface 121 of thesubstrate 120, memory chips 140, each memory chip at least partiallyoverlying a rear surface 136 of at least one of the logic chips, and aheat spreader 150 overlying a rear surface of each logic chip. One ormore dielectric layers 160 can overlie the first surface 121 of thesubstrate 120.

The interconnection substrate 120 having an interposer portion 124 andone or more dielectric layers 160 overlying the intermediate surface 125thereof are the same as the interconnection substrate 20, the interposerportion 24, and the dielectric layers 60 described above with referenceto FIG. 1.

The logic chips 130 are the same as the logic chips 30 described abovewith reference to FIG. 1, except that the first logic chip 131 islocated at the right side of FIG. 4, and the second and third logicchips 132 and 133 are located at the left of FIG. 4.

The heat spreader 150 is the same as the heat spreader 50 describedabove with reference to FIG. 1, except that the heat spreader overliesthe logic chips 130 and underlies the memory chips 140. As shown in FIG.4, the heat spreader 150 can directly contact rear surfaces 136 of thelogic chips 130. In a particular embodiment, a thermal adhesive (notshown) can be disposed between a lower surface 151 of the heat spreader150 and the rear surfaces 136 of the logic chips 130. In one example,the heat spreader 150 can at least partially overlie the rear surface136 of at least one of the logic chips 130.

The memory chips 140 are the same as the memory chips 40 described abovewith reference to FIG. 1, except that the first memory chip 141 islocated at the right side of FIG. 4, and the second memory chip 142 islocated at the left side of FIG. 4.

Each of the memory chips 140 can at least partially overlie the rearsurface 136 of at least one of the logic chips 130 and an upper surface152 of the heat spreader 150. The rear surface 146 of the first memorychip 141 can confront the upper surface 152 of the heat spreader 150,such that the first memory chip can be oriented face-up with respect tothe first surface 121 of the substrate 120. The front surface 145 of thesecond memory chip 142 can confront the upper surface 152 of the heatspreader 150, such that the second memory chip can be oriented face-downwith respect to the first surface 121 of the substrate 120.

In one example, the first memory chip 141 can be attached to the heatspreader 150 by an adhesive layer 172 extending between the rear surface146 of the first memory chip and the upper surface 152 of the heatspreader. In a particular embodiment, the second memory chip 142 can beattached to the heat spreader 150 by adhesive layers 172 extendingbetween the front surface 145 of the second memory chip and the uppersurface 152 of the heat spreader. In such an embodiment, the adhesivelayers 172 can extend along the front surface 145 of the second memorychip 142 near lateral edges 147 thereof, such that the adhesive layersdo not contact the contacts 144 of the second memory chip.

Similar to the microelectronic assembly 10 of FIG. 1, some or all of thecontacts 144 of the first memory chip 141 can be electrically connectedto the contacts 123 by respective wire bonds 163 extending therebetween.Such wire bonds 163 can be located between lateral edges 137 of thefirst and second logic chips 131 and 132 in a horizontal direction H,and such wire bonds can extend through an opening 153 extending throughthe heat spreader 150 between the upper and lower surfaces 152 and 151.The first memory chip 141 can be connected to the plurality ofelectrically conductive traces 162 through at least one of the wirebonds 163. In one embodiment (not shown), the wire bonds 163 can extendbetween lateral edges of two adjacent heat spreaders 150 rather thanextending through an opening 153 in a single heat spreader.

FIG. 5A shows further details of the electrical connection between thecontacts 144 of the second memory chip 142 and the contacts 123 exposedat the first surface 121 of the interconnection substrate 120 shown inFIG. 4. Similar to the microelectronic assembly 10 of FIG. 1, some orall of the contacts 144 can be electrically connected to the contacts123 by respective conductive posts 164 extending therebetween. Suchconductive posts 164 can be located between lateral edges 137 of thesecond and third logic chips 132 and 133 in the horizontal direction H,and such conductive posts can extend through an opening 154 extendingthrough the heat spreader 150 between the upper and lower surfaces 152and 151. The second memory chip 142 can be connected to the plurality ofelectrically conductive traces 162 through at least one of theconductive posts 164. In one embodiment (not shown), the conductiveposts 164 can extend between lateral edges of two adjacent heatspreaders 150 rather than extending through an opening 154 in a singleheat spreader.

In a particular embodiment (not shown), some or all of the conductiveposts 164 can conform to a contour of the inner surface 155 of therespective opening 154, such that each conductive post and itsrespective opening can be considered to be a through heat sinkconductive via. In such an embodiment having a conductive via extendingthrough an opening of the heat spreader 150, a dielectric layer canextend between the conductive via and an inner surface of the opening toseparate and insulate the conductive via from the heat spreader. In oneexample, the heat spreader can have at least one through heat sinkconductive via extending therethrough between the opposing upper andlower surfaces thereof, such that at least one memory chip 140 can beelectrically connected to the plurality of traces 162 through theconductive via.

In some embodiments, the wire bonds 163 extending through an opening 153in the heat spreader 150 or the conductive posts 164 extending throughan opening 154 in the heat spreader can be considered to be leadsextending through an opening in the heat spreader, and the conductivestructure of the substrate 120 can be considered to include such leads.As used herein, a “lead” is a portion of or the entire electricalconnection extending between two electrically conductive elements, suchas the lead comprising the wire bond 163 that extends from one of thecontacts 144 of the first memory chip 141, through the opening 153 inthe heat spreader 150, to one of the conductive contacts 123 exposed atthe first surface 121 of the interconnection substrate 120.

FIG. 5B shows an alternate embodiment of the electrical connectionbetween the contacts 144 of the second memory chip 142 and the contacts123 exposed at the first surface 121 of the interconnection substrate120 shown in FIG. 4. As shown in FIG. 5B, some or all of the conductiveposts 164 of FIG. 4 can be replaced by respective conductive posts 186and conductive masses 177.

Similar to the conductive posts 86 described with reference to FIG. 3D,each of the conductive posts 186 can extend from a respective conductivecontact 144 exposed at the front surface 145 of the second memory chip142 in the vertical direction V and can be located between opposinglateral edges 137 of the second and third logic chips 132 and 133 in thehorizontal direction H.

Such conductive posts 186 can also extend through an opening 154extending through the heat spreader 150 between the upper and lowersurfaces 152 and 151. The second memory chip 142 can be connected to theplurality of electrically conductive traces 162 through at least one ofthe conductive posts 186.

Each conductive post 186 can be connected with a respective contact 123by a conductive mass 177. The conductive masses 177 can be solder ballsor any other material described above with reference to the conductivemasses 27.

Similar to the conductive posts 164 described above with reference toFIG. 5A, in a particular embodiment (not shown), some or all of theconductive posts 186 can conform to a contour of the inner surface 155of the respective opening 154, such that each conductive post and itsrespective opening can be considered to be a through heat sinkconductive via. In such an embodiment having a conductive post 164extending through an opening of the heat spreader 150, a dielectriclayer can extend between the conductive post and an inner surface of theopening to separate and insulate the conductive post from the heatspreader.

Referring now to FIG. 6, a microelectronic assembly 210 according to anembodiment of the present invention is the same as the microelectronicassembly 10 described above with reference to FIG. 1, except that themicroelectronic assembly 210 includes a planarized encapsulant 290overlying the first surface 21 of the interconnection substrate 20, andthe assembly 210 includes alternate electrical connections between thecontacts 44 of the memory chips 40 and the contacts 23 exposed at thefirst surface 21. Although a heat spreader is not shown in FIG. 6, aheat spreader such as the heat spreader shown in FIG. 1 can be includedin the microelectronic assembly 210 overlying the logic chips 30 and/orthe memory chips 40.

The planarized encapsulant 290 can extend between the logic chips 30 inthe horizontal direction H, such that the planarized encapsulantsubstantially surrounds the lateral edges 37 of the logic chips. Theplanarized encapsulant 290 can have a major surface 291 that isplanarized with the rear surface 36 of each of the logic chips 30.

The planarized encapsulant 290 can include at least one conductive via264 extending therethrough between the major surface 291 and a secondsurface 292 opposite therefrom. Such conductive vias 264 can be locatedbetween lateral edges 37 of adjacent ones of the logic chips 30 in thehorizontal direction E. At least one of the memory chips 40 can beelectrically connected to the plurality of traces 62 through the atleast one conductive via 264.

In a particular embodiment, at least one of the conductive vias 264 canbe formed by depositing a conductive metal within an opening 254extending through the planarized encapsulant 290. The depositing of theconductive metal to form the conductive vias 264 can be done by platingof the metal onto an inner surface 255 of the opening 254. Theconductive vias 264 can be solid, or the conductive vias can include aninternal void that can be filled with a dielectric material. In anotherexample, the conductive vias can be formed by depositing a conductivesintering material into openings in the encapsulant 290, e.g., by ascreening, stenciling, or dispensing process, and subsequently curingthe sintering material to form a void-free conductive matrix in theopenings. In yet another example, a screening, stenciling, or dispensingprocess can be used to deposit a conductive paste such as solder pasteor silver-filled paste, etc. within the openings.

In still another example, the conductive vias 264 can be formed beforethe logic chips 30 or the memory chips 40 are attached to theinterconnection substrate 20. In such an embodiment, a metal layer canbe deposited onto the first surface 21 of the interconnection substrate20 overlying the dielectric layers 60. A mask layer such as aphotoresist layer can be applied to locations of the metal layer whereit is desired to form the conductive vias 264. Then, the metal layer canbe etched away in locations not protected by the mask layer, leaving theconductive vias 264 extending from the first surface 21. Subsequently,the mask layer can be removed and the encapsulant 290 can be appliedextending around lateral surfaces of the conductive vias 264 and lateraledges 37 of the logic chips 30.

As shown in FIG. 6, some or all of the contacts 44 of the first memorychip 41 can be electrically connected to the conductive vias 264 byrespective wire bonds 263 extending therebetween, such that the firstmemory chip can be connected to the plurality of electrically conductivetraces 62 through the wire bonds and the conductive vias. Each wire bond263 can extend from a contact 44 to an upper surface 265 of a respectiveconductive via 264. Each upper surface 265 can be exposed at the majorsurface 291 of the planarized encapsulant 290.

FIG. 7A shows further details of the electrical connection between thecontacts 44 of the second memory chip 42 and the contacts 23 exposed atthe first surface 21 of the interconnection substrate 20 shown in FIG.6. As shown in FIG. 7A, each conductive via 264 can extend between acontact 23 and a conductive pad 266 exposed at the major surface 291 ofthe planarized encapsulant 290. A conductive mass 275 can extend betweeneach conductive pad 266 and a corresponding contact 44 of the secondmemory chip 42.

FIG. 7B shows an alternate embodiment of the conductive via 264extending between the contacts 44 of the second memory chip 42 and thecontacts 23 exposed at the first surface 21 of the interconnectionsubstrate 20 shown in FIGS. 6 and 7A. As shown in FIG. 7B, a conductivevia 264′ extending between the contact 23 and the conductive pad 266exposed at the major surface 291 of the planarized encapsulant 290 canhave a cylindrical shape, rather than the frustoconical shape of theconductive via 264 shown in FIG. 7A.

FIG. 8 is a top-down plan view that can correspond to themicroelectronic assemblies shown in FIGS. 1 through 7B. As shown in FIG.8, a microelectronic assembly 310 can include a plurality of logic chips30 overlying the first surface 21 of the interconnection substrate 20and memory chips 40 overlying the rear surface 36 of the logic chips.Each memory chip 40 can have any longitudinal orientation relative tothe logic chips 30 over which the memory chip lies. It is preferablethat each memory chip 40 at least partially overlies the rear surface 36of at least one logic chip 30.

Referring now to FIG. 9, a microelectronic structure 400 according to anembodiment of the present invention can include a microelectronicassembly 410 and a second substrate 401, where the microelectronic 410can be any of the microelectronic assemblies 10, 110, 210, or 310described above. In one example, the second substrate 401 can have aneffective CTE greater than or equal to 10 ppm/° C.

In a particular embodiment, the second substrate 401 can be a substrateof a package in which the microelectronic assembly 410 is furtherincorporated. In an exemplary embodiment, the second substrate 401 canbe a circuit panel such as a motherboard. In one embodiment, the secondsubstrate 401 can be a module substrate that can be further connected toa circuit panel or another component.

The second substrate 401 can have a first surface 402 and a secondsurface 403 opposite the first surface. The first surface 402 of thesecond substrate 401 can face the second surface 422 of theinterconnection substrate 420. The second substrate 401 can haveconductive contacts 404 exposed at the first surface 402 and electricalterminals 405 exposed at the second surface 403 for connection withanother component, such as a circuit board. In a particular embodiment,the electrical terminals 405 can be on the second surface 403 that isopposite the first surface 402 that faces the interconnection substrate420.

Each conductive contact 404 can be electrically connected with arespective electrical terminal 426 of the interconnection substrate 420by a conductive mass 427. The electrical terminals 405 can beelectrically connected to another component through conductive masses406. The conductive masses 406 and 427 can be solder balls or any othermaterial described above with reference to the conductive masses 27.

The microelectronic assemblies described above can be utilized inconstruction of diverse electronic systems, as shown in FIG. 10. Forexample, a system 500 in accordance with a further embodiment of theinvention includes a microelectronic assembly 506 as described above inconjunction with other electronic components 508 and 510. Themicroelectronic assembly 506 can be any of the microelectronicassemblies 10, 110, 210, or 310 described above, or the microelectronicassembly 506 can be the microelectronic structure 400 described above.In the example depicted, component 508 is a semiconductor chip whereascomponent 510 is a display screen, but any other components can be used.Of course, although only two additional components are depicted in FIG.10 for clarity of illustration, the system may include any number ofsuch components. The microelectronic assembly 506 may be any of theassemblies described above. In a further variant, any number of suchmicroelectronic assemblies may be used.

Microelectronic assembly 506 and components 508 and 510 are mounted in acommon housing 501, schematically depicted in broken lines, and areelectrically interconnected with one another as necessary to form thedesired circuit. In the exemplary system shown, the system includes acircuit panel 502 such as a circuit board or flexible printed circuitboard, and the circuit panel includes numerous conductors 504, of whichonly one is depicted in FIG. 10, interconnecting the components with oneanother. However, this is merely exemplary; any suitable structure formaking electrical connections can be used.

The housing 501 is depicted as a portable housing of the type usable,for example, in a cellular telephone or personal digital assistant, andscreen 510 is exposed at the surface of the housing. Where structure 506includes a light-sensitive element such as an imaging chip, a lens 511or other optical device also may be provided for routing light to thestructure. Again, the simplified system shown in FIG. 10 is merelyexemplary; other systems, including systems commonly regarded as fixedstructures, such as desktop computers, routers and the like can be madeusing the structures discussed above.

The openings and conductive elements disclosed herein can be formed byprocesses such as those disclosed in greater detail in the co-pending,commonly assigned U.S. patent application Ser. Nos. 12/842,587,12/842,612, 12/842,651, 12/842,669, 12/842,692, and 12/842,717, filedJul. 23, 2010, and in published U.S. Patent Application Publication No.2008/0246136, the disclosures of which are incorporated by referenceherein.

Although the invention herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent invention. It is therefore to be understood that numerousmodifications may be made to the illustrative embodiments and that otherarrangements may be devised without departing from the spirit and scopeof the present invention as defined by the appended claims.

It will be appreciated that the various dependent claims and thefeatures set forth therein can be combined in different ways thanpresented in the initial claims. It will also be appreciated that thefeatures described in connection with individual embodiments may beshared with others of the described embodiments.

1. A microelectronic assembly, comprising: an interconnection substratehaving a first surface, a second surface remote from the first surfacein a vertical direction, conductive structure thereon, and terminalsexposed at the second surface for connection with a component; at leasttwo logic chips overlying the first surface of the substrate, each logicchip having a plurality of signal contacts at a front surface thereofconfronting the first surface of the interconnection substrate, thesignal contacts of each logic chip being directly electrically connectedto the signal contacts of the other logic chips through the conductivestructure of the substrate for transfer of signals between the logicchips, the signals representing at least one of data or instructions,the logic chips being adapted to simultaneously execute a set ofinstructions of a given thread of a process, and each logic chip havinga rear surface opposite the front surface; and a memory chip having afront surface with contacts thereon, the front surface of the memorychip confronting the rear surface of each of the at least two logicchips, the contacts of the memory chip being directly electricallyconnected to the signal contacts of at least one of the at least twologic chips through the conductive structure of the substrate.
 2. Themicroelectronic assembly as claimed in claim 1, further comprising anintermediate interposer substrate located between first and second logicchips of the at least two logic chips in a horizontal directionperpendicular to the vertical direction, the intermediate interposersubstrate having at least one conductive via extending therethroughbetween opposing first and second surfaces thereof, wherein theconductive structure of the substrate includes the at least oneconductive via.
 3. The microelectronic assembly as claimed in claim 1,further comprising at least one solder connect extending from the frontsurface of the memory chip in the vertical direction and located betweenfirst and second logic chips of the at least two logic chips in ahorizontal direction perpendicular to the vertical direction, whereinthe conductive structure of the substrate includes the at least onesolder connect.
 4. The microelectronic assembly as claimed in claim 1,further comprising at least one conductive pillar extending from theinterconnection substrate in the vertical direction and located betweenfirst and second logic chips of the at least two logic chips in ahorizontal direction perpendicular to the vertical direction, whereinthe conductive structure of the substrate includes the at least oneconductive pillar, each conductive pillar being electrically connectedto a respective conductive element exposed at the front surface of thememory chip by a conductive mass.
 5. The microelectronic assembly asclaimed in claim 1, further comprising at least one conductive postextending from the front surface of the memory chip in the verticaldirection and located between first and second logic chips of the atleast two logic chips in a horizontal direction perpendicular to thevertical direction, wherein the conductive structure of the substrateincludes the at least one conductive post, each conductive post beingelectrically connected to a respective conductive element exposed at thefirst surface by a conductive mass.
 6. The microelectronic assembly asclaimed in claim 1, further comprising at least one conductive pillarextending from the interconnection substrate in the vertical directionand at least one conductive post extending from the front surface of thememory chip in the vertical direction, each of the conductive pillarsand posts located between first and second logic chips of the at leasttwo logic chips in a horizontal direction perpendicular to the verticaldirection, wherein the conductive structure of the substrate includesthe conductive pillars and posts, each conductive pillar beingelectrically connected to a respective conductive post by a conductivemass.
 7. The microelectronic assembly as claimed in claim 1, wherein theinterconnection substrate includes at least one raised surface extendingabove the first surface in the vertical direction, the at least oneraised surface located between first and second logic chips of the atleast two logic chips in a horizontal direction perpendicular to thevertical direction, wherein the conductive structure of the substrateincludes at least one conductive contact of the at least one raisedsurface.
 8. The microelectronic assembly as claimed in claim 7, whereinthe at least one raised surface includes a plurality of stackeddielectric layers overlying the first surface of the interconnectionsubstrate.
 9. The microelectronic assembly as claimed in claim 1,further comprising an encapsulant having a substantially planar majorsurface, the encapsulant extending between first and second logic chipsof the at least two logic chips in a horizontal direction perpendicularto the vertical direction, wherein the major surface of the encapsulantis substantially co-planar with the rear surface of each of the firstand second logic chips.
 10. The microelectronic assembly as claimed inclaim 9, wherein the encapsulant has at least one conductive viaextending therethrough between the major surface and a second surfaceopposite the major surface, and the conductive structure of thesubstrate includes the at least one conductive via.
 11. Amicroelectronic assembly, comprising: an interconnection substratehaving a first surface, a second surface remote from the first surfacein a vertical direction, conductive structure thereon, and terminalsexposed at the second surface for connection with a component; at leasttwo logic chips overlying the first surface of the substrate, the logicchips having adjacent parallel edges spaced apart by no more than 500microns, each logic chip having a plurality of signal contacts at afront surface thereof confronting the first surface of theinterconnection substrate, the signal contacts of each logic chip beingdirectly electrically connected to the signal contacts of the otherlogic chips through the conductive structure of the substrate fortransfer of signals between the logic chips, the signals representing atleast one of data or instructions, the logic chips being adapted tosimultaneously execute a set of instructions of a given thread of aprocess, and each logic chip having a rear surface opposite the frontsurface; and a memory chip having a front surface with contacts thereonand a rear surface opposite the front surface, the front surface of thememory chip confronting the rear surface of at least one of the at leasttwo logic chips, the contacts of the memory chip being directlyelectrically connected to the signal contacts of at least one of the atleast two logic chips through the conductive structure of the substrate.12. The microelectronic assembly as claimed in claim 11, furthercomprising at least one wire bond extending from the front surface ofthe memory chip to the first surface of the interconnection substrate,the at least one wire bond located between first and second logic chipsof the at least two logic chips in a horizontal direction perpendicularto the vertical direction, wherein the conductive structure of thesubstrate includes the at least one wire bond.
 13. The microelectronicassembly as claimed in claim 1 or claim 11, wherein the interconnectionsubstrate has an effective CTE less than 10 ppm/° C.
 14. Themicroelectronic assembly as claimed in claim 13, further comprising asecond substrate having a surface that faces the second surface of theinterconnection substrate, the second substrate having contactselectrically connected with the terminals of the interconnectionsubstrate, the second substrate having an effective CTE greater than orequal to 10 ppm/° C. and having second terminals on a surface oppositethe surface that faces the interconnection substrate.
 15. Themicroelectronic assembly as claimed in claim 1 or claim 11, wherein theinterconnection substrate has an effective CTE less than 7 ppm/° C. 16.The microelectronic assembly as claimed in claim 1 or claim 11, whereinthe at least two logic chips have substantially identical structure. 17.The microelectronic assembly as claimed in claim 1 or claim 11, whereinthe conductive structure of the substrate includes a plurality ofelectrically conductive traces extending in a direction substantiallyparallel to the first surface.
 18. The microelectronic assembly asclaimed in claim 1 or claim 11, further comprising a heat spreader atleast partially overlying a rear surface of at least one of the logicchips.
 19. The microelectronic assembly as claimed in claim 18, whereinthe heat spreader at least partially overlies the memory chip.
 20. Themicroelectronic assembly as claimed in claim 19, wherein the memory chiphas a first width in a horizontal direction perpendicular to thevertical direction and first and second logic chips of the at least twologic chips have a combined second width in the horizontal direction,the first width being less than the second width.
 21. Themicroelectronic assembly as claimed in claim 20, wherein the heatspreader includes a pedestal portion extending beyond a lower surfacethereof, the pedestal portion contacting the rear surface of at leastone of the first and second logic chips.
 22. The microelectronicassembly as claimed in claim 18, wherein the memory chip at leastpartially overlies an upper surface of the heat spreader.
 23. Themicroelectronic assembly as claimed in claim 22, wherein the conductivestructure of the substrate includes a lead extending through an openingin the heat spreader.
 24. The microelectronic assembly as claimed inclaim 22, further comprising a plurality of heat spreaders includingsaid heat spreader, each of the plurality of heat spreaders at leastpartially overlying a rear surface of at least one of the logic chips,wherein the conductive structure of the substrate includes a leadextending between edges of two adjacent ones of the plurality of heatspreaders.
 25. A system comprising a structure according to claim 1 orclaim 11 and one or more other electronic components electricallyconnected to the structure.
 26. A system as claimed in claim 25, furthercomprising a housing, said structure and said other electroniccomponents being mounted to said housing.
 27. A method of fabricating amicroelectronic assembly, comprising: providing an interconnectionsubstrate having a first surface, a second surface remote from the firstsurface in a vertical direction, conductive structure thereon, andterminals exposed at the second surface for connection with a component;electrically connecting signal contacts of at least two logic chips toone another through the conductive structure of the substrate fortransfer of signals between the logic chips, the signals representing atleast one of data or instructions, the logic chips being adapted tosimultaneously execute a set of instructions of a given thread of aprocess, each logic chip having a front surface confronting the firstsurface of the interconnection substrate; and electrically connectingcontacts exposed at a front surface of a memory chip to the signalcontacts of at least one of the at least two logic chips through theconductive structure of the substrate, the front surface of the memorychip confronting the rear surface of each of the at least two logicchips.
 28. The method as claimed in claim 27, further comprisingproviding an encapsulant between the at least two logic chips in ahorizontal direction perpendicular to the vertical direction.
 29. Themethod as claimed in claim 28, wherein the step of electricallyconnecting the contacts exposed at the front surface of the memory chipincludes forming openings extending in the vertical direction throughthe encapsulant between a major surface thereof and the first surface ofthe substrate, such that contacts of the conductive structure of thesubstrate are exposed within the openings, the openings being locatedbetween first and second logic chips of the at least two logic chips inthe horizontal direction; and forming conductive vias in contact withthe contacts of the conductive structure of the substrate and extendingwithin the openings; and electrically connecting the contacts of thememory chip with the conductive vias.
 30. The method as claimed in claim29, wherein the first and second logic chips each have a rear surfaceopposite the respective front surface thereof, and the step of providingthe encapsulant includes planarizing a major surface of the encapsulantso that the major surface is substantially co-planar with the rearsurface of each of the first and second logic chips.
 31. The method asclaimed in claim 30, wherein the planarizing is performed by lapping themajor surface of the encapsulant and the rear surface of each of thefirst and second logic chips.